Radiation damage

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

No prostě jsme to v Řeži nasmažili do křemíkového pixelového detektoru pořádnou dávkou energetických protonů z urychlovače a pak všemožně testovali, jaký to na něj má vliv ... abych tak řekl.
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Prezentace

IWORID 2012 - 14th International Workshop on Radiation Imaging Detectors, Figueira da Foz, Portugal
1. 7. 2012 - 6. 7. 2012
Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip
Poster

Publikace

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip
M. Platkevič, J. Jakůbek, V. Havránek, M. Jakůbek, V. Semian, J. Žemlička
JINST 8 C04001 (2013)

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency
M. Jakůbek, J. Jakůbek, J. Žemlička, M. Platkevič, V. Havránek, V. Semian
JINST 8 C03023 (2013)

Granty

Pracoviště pro nedestruktivní testování, diagnostiku a 3D zobrazování pomocí neutronové radiografie a tomografie
- TA01010237, Program na podporu aplikovaného výzkumu a experimentálního vývoje ALFA. TA0 - Technologická agentura České republiky (TA ČR) , 2011 - 2015

Využití radionuklidů a ionizujícího záření
- MSM6840770040, Ministerstvo školství, mládeže a tělovýchovy (MŠMT) , 2007 - 2012

Urychlovač Tandetron 4130 MC
Ústav jaderné fyziky AV ČR, v.v.i.
Řež

Studies of radiation hardness of silicon sensors are standardly performed with singlepad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-overthreshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 1012 particles/cm2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

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